Ion Beam Etching Systems
Hakuto (NS) — 10IBE / 20IBE-C / 20IBE-J
Ion beam etching removes material physically rather than chemically, which makes it the practical answer for materials that resist conventional plasma etching: magnetic stacks, precious metals, alloys and compound semiconductors. Hakuto builds the systems around Kaufman-type ion sources and runs them on argon alone, so no toxic process gas infrastructure is required. The line spans a research tool and two production platforms, and each system is configured to the customer’s substrate and throughput needs.
Specifications
- Models
- 10IBE for research, 20IBE-C for production, 20IBE-J for large-scale production
- Ion source
- Kaufman type, 8 cm to 20 cm
- Process gas
- Argon only, no toxic gas required
- Uniformity
- Planetary stage movement
- Substrates
- 3 to 6 inch diameter, 1 to 12 substrates per run depending on model
- Materials
- Magnetic materials, gold, platinum, alloyed metals, compound semiconductors, some dielectrics
- Customisation
- Configured to the customer’s requirements and budget
Hakuto and its product names are trademarks of the manufacturer. Specifications on this page are reproduced from the manufacturer’s own published material and may change without notice; please confirm current details with us before ordering.